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AP30G120SW
Pb Free Plating Product
Advanced Power Electronics Corp. Features
High speed switching Low Saturation Voltage VCE(sat)=3.0V@IC=30A
CO-PAK, IGBT with FRD RoHS Compliant
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
VCES IC C G C E TO-3P G E
Parameter Rating 1200 30 60 30 160 12 75 208 -55 to 150 -55 to 150 300
1200V 30A
Absolute Maximum Ratings
Symbol VCES VGE IC@TC=25 IC@TC=100 ICM IF@TC=100 IFM PD@TC=25 TSTG TJ TL Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Diode Continunous Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . Collector-Emitter Voltage
Units V V A A A A A W
Notes:
1.Repetitive rating : Pulse width limited by max . junction temperature .
Thermal Data
Symbol Rthj-c(IGBT) Rthj-c(Diode) Rthj-a Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Value 0.6 1.6 40 Units /W /W /W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVCES IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Cies Coes Cres VF-1 VF-2 trr Qrr Parameter Collect-to-Emitter Breakdown Voltage Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE=0V VCE=30V f=1.0MHz IF=10A IF=20A IF=10A di/dt = 100 A/s Test Conditions VGE=0V, IC=250uA VGE=30V, VCE=0V VCE=1200V, VGE=0V VGE=15V, IC=30A VGE=15V, IC=60A VCE=VGE, IC=1mA IC=30A VCC=500V VGE=15V VCC=600V, Ic=30A, VGE=15V, RG=5, Inductive Load Min. 1200 3 Typ. 3 3.8 4.4 55 12 27 20 20 65 200 1.8 1.1 1320 105 9 Max. 500 1 3.6 7 88 300 2110 Units V nA mA V V V nC nC nC ns ns ns ns mJ mJ pF pF pF
Electrical Characteristics of Diode@Tj=25(unless otherwise specified)
Forward Voltage Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1.7 1.8 80 22 2 2.4 V V ns nC
Data and specifications subject to change without notice
200630061-1/3
AP30G120SW
160
100
T C =25 o C IC , Collector Current (A)
120
20V 18V 15V IC , Collector Current (A)
T C =150 C
80
o
20V 18V 15V 12V
12V
80
60
V GE =10V
40
V GE =10V
40
20
0 0 3 6 9 12
0 0 3 6 9 12
V CE , Collector-Emitter Voltage (V)
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
6
140
V GE =15V VCE(sat) ,Saturation Voltage(V)
5
V GE = 15 V
IC , Collector Current(A)
120
T C =25
100
I C = 60 A
4
80
T C =150
I C =30A
3
60
40
2
20
0 0 2 4 6 8 10 12
1 0 40 80 120 160
V CE , Collector-Emitter Voltage (V)
Junction Temperature ( o C)
Fig 3. Typical Saturation Voltage Characteristics
1.4 10000
Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature
f=1.0MHz
Normalized VGE(th) (V)
C ies
1.1
Capacitance (pF)
100
C oes
0.8
C res
0.5 -50 0 50 100 150
1 1 10 100
Junction Temperature ( o C )
V CE , Collector-Emitter Voltage (V)
Fig 5. Gate Threshold Voltage
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2/3
AP30G120SW
1000
1
V GE =15V T C =125 o C IC, Peak Collector Current(A)
100
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
10
t T
0.01
Safe Operating Area
1 1 10 100 1000 10000
Single Pulse
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V CE , Collector-Emitter Voltage(V)
t , Pulse Width (s)
Fig 7. Turn-off SOA
Fig 8. Effective Transient Thermal
Impedance
20
20
o T C =25 C
TC=150oC VCE , Collector-Emitter Voltage(V)
15
VCE , Collector-Emitter Voltage(V)
15
10
10
5
I C = 60 A I C = 30 A I C = 15 A
I C = 60 A
5
I C = 30 A I C = 15 A
0
0
0 4 8 12 16 20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
Fig 10. Saturation Voltage vs. VGE
15
20
VGE , Gate -Emitter Voltage (V)
IF , Forward Current (A)
16
10
I C = 3 0A V CC =200V V CC =300V V CC =500V
12
T j =150 C
5
o
T j =25 C
o
8
4
0 0 0.4 0.8 1.2 1.6 2 2.4
0 0 20 40 60 80
V F , Forward Voltage (V)
Q G , Gate Charge (nC)
Fig11. Forward Characteristic of
Fig 12. Gate Charge Characterisitics
Diode
3/3

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